FFB5551 دیتاشیت

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مشاهده دیتاشیت FFB5551	دانلود دیتاشیت

FFB5551 5 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi FFB5551
Transistor Type: 2 NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 200mA
Power Dissipation (Pd): 200mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
Collector Cut-Off Current (Icbo): 50nA
Collector-Emitter Breakdown Voltage (Vceo): 160V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
Package: SC-70-6L
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)
Base Part Number: FFB55
detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SC-88 (SC-70-6)